Non-volatile Latch Using Magneto-Electric and Ferro-Electric Tunnel Junctions
Two memory structures under development in the Nanoelectronics Research Initiative (NRI) of the Semiconductor Research Corporation (SRC) show promise for low power, small area, high performance non-volatile memory devices. However, these will not operate in conjunction with conventional CMOS directly. This invention describes circuit configurations...
Published: 11/18/2020
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Inventor(s): Jonathan Bird (UB), Uttam Singisetti (UB), Andrew Marshall (Non-UB)
Keywords(s): Technologies
Category(s): Technology Classifications > Electronics, Technology Classifications > Engineering, Campus > University at Buffalo
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