Non-volatile Latch Using Magneto-Electric and Ferro-Electric Tunnel Junctions
Web Published:
10/16/2020
Two memory structures under development in the Nanoelectronics Research Initiative (NRI) of the Semiconductor Research Corporation (SRC) show promise for low power, small area, high performance non-volatile memory devices. However, these will not operate in conjunction with conventional CMOS directly. This invention describes circuit configurations that allow such interfacing. 6933
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