Ga₂O₃ Vertical MOSFET for Enhanced Power Management
A vertical trench MOSFET using a unique in-situ Mg-doped current blocking layer to enable high-voltage operation with enhanced efficiency and robustness in power electronic devices.
Background:
This technology addresses the need for high-voltage power devices suitable for grid and traction applications, overcoming the limitations of traditional silicon-based...
Published: 7/31/2025
|
Inventor(s): Uttam Singisetti, Hongping Zhao, Sudipto Saha, Lingyu Meng, Dong Yu
Keywords(s): Featured, Semiconductor and Microprocessing, Technologies
Category(s): Campus > University at Buffalo, Technology Classifications > Energy, Technology Classifications > Electronics
|